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SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR
ISSUE 4 - MARCH 2001 COMPLEMENTARY TYPE - BSP32
BSP42
C
PARTMARKING DETAIL -
BSP42 C B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at T amb =25C Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO I CM IC IB P tot T j:T stg VALUE 90 80 5 2 1 100 2 -55 to +150 UNIT V V V A A mA W C
ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated).
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Static Forward Current Transfer Ratio Output Capacitance Input Capacitance Transition Frequency Turn-On Time Turn-Off Time SYMBOL V (BR)CBO V (BR)CEO V (BR)EBO I CBO V CE(sat) V BE(sat) h FE 10 40 30 MIN. 90 80 5 100 50 0.25 0.5 1.0 1.2 120 12 90 100 250 1000 pF pF MHz ns ns MAX. UNIT V V V nA A V V V V CONDITIONS. I C=100A I C=10mA I E=10A V CB=60V V CB=60V, T amb=125C I C =150mA, I B=15mA I C =500mA, I B=50mA I C =150mA, I B=15mA I C =500mA, I B=50mA I C =100A, V CE=5V I C =100mA, V CE=5V I C =500mA, V CE=5V V CB =10V, f =1MHz V EB =0.5V, f=1MHz I C=50mA, V CE=10V f =35MHz V CC =20V, I C =100mA I B1 =-I B2 =-5mA
C obo C ibo fT T on T off
*Measured under pulsed conditions. For typical characteristics graphs see FMMT493 datasheet.
TBA

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